sep.2000 4 f 6.5 mounting holes 2?8nuts 2?4nuts e g ec g e c e cm 12.55 9.5 20.5 107 93 0.25 62 48 0.25 26 +1 ?.5 34 +1 ?.5 4 24.35 8.5 21.15 8.5 19.1 6.5 17.2 6.5 13.5 29 18 26 6.5 23 6 23 9 10 label circuit diagram tc measured point rtc CM600HU-12F application general purpose inverters & servo controls, etc mitsubishi igbt modules CM600HU-12F high power switching use i c ................................................................... 600a v ces ............................................................ 600v insulated type 1-elements in a pack outline drawing & circuit diagram dimensions in mm
sep.2000 v v w c c v n ? m n ? m n ? m g v ce = v ces , v ge = 0v v ge = v ces , v ce = 0v t j = 25 c t j = 125 c v cc = 300v, i c = 600a, v ge = 15v v cc = 300v, i c = 600a v ge1 = v ge2 = 15v r g = 3.1 w , inductive load switching operation i e = 600a i e = 600a, v ge = 0v igbt part fwdi part case to fin, thermal compoundapplied *2 tc measured point is just under the chips i c = 60ma, v ce = 10v i c = 600a, v ge = 15v v ce = 10v v ge = 0v 600 20 600 1200 600 1200 1420 C40 ~ +150 C40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 mitsubishi igbt modules CM600HU-12F high power switching use a a 1 80 2.2 160 11 6.0 600 400 900 250 300 2.6 0.088 0.12 0.048 * 3 31 ma m a nf nc m c v c/w w 1.6 1.6 3720 11.7 0.02 3.1 6v v ns 57 ns collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance thermal resistance external gate resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r th(j-c) q r g symbol parameter v ge(th) v ce(sat) note 1. i e , v ec , t rr , q rr , die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (fwdi). 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. * 1 : tc measured point is indicated in outline drawing. * 2 : typical value is measured by using shin-etsu silicone g-746. * 3 : if you use this value, r th(f-a) should be measured just under the chips. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage torque strength weight g-e short c-e short t c = 25 c pulse (note 2) t c = 25 c pulse (note 2) t c = 25 c main terminal to base plate, ac 1 min. main terminal m8 mounting holes m6 g(e) terminal m4 typical value symbol parameter collector current emitter current conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit ty p. limits min. max. maximum ratings (tj = 25 c) electrical characteristics (tj = 25 c) test conditions
sep.2000 mitsubishi igbt modules CM600HU-12F high power switching use performance curves 200 400 600 800 1000 1200 0 0 0.5 1 1.5 2 2.5 3 3.5 4 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 0 0.5 1 1.5 2 3.5 4 2.5 3 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 ? 2 10 0 357 2 10 1 357 2 10 2 357 0.5 1 1.5 2 2.5 3 0 1200 0 400 800 5 4 3 2 1 0 6 8 10 12 14 16 18 20 10 0 10 1 23 57 10 2 23 57 10 3 23 57 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 0 11 15 10 8.5 8 7.5 9.5 v ge =20v t j =25 c 9 t j = 25 c t j = 125 c v ge = 15v i c = 1200a i c = 600a i c = 240a t j = 25 c t j = 25 c v ge = 0v c ies c oes c res t d(off) t d(on) t f t r conditions: v cc = 300v v ge = 15v r g = 3.1 w t j = 125 c output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) free-wheel diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) half-bridge switching characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) switching times (ns) collector current i c (a)
sep.2000 mitsubishi igbt modules CM600HU-12F high power switching use 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 1 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 0 2 4 6 8 10 12 14 16 18 20 0 1000 2000 3000 4000 5000 1 10 ? 10 ? 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 3 2 23 57 23 57 single pulse t c = 25 c i rr t rr v cc = 200v v cc = 300v i c = 600a conditions: v cc = 300v v ge = 15v r g = 3.1 w t j = 25 c reverse recovery characteristics of free-wheel diode (typical) emitter current i e (a) transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j?) ( c/w) tmie (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) igbt part: per unit base = r th(j c) = 0.088 c/ w fwdi part: per unit base = r th(j c) = 0.12 c/ w reverse recovery time t rr (ns) reverse recovery current l rr (a)
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